2D Transition Metal Dichalcogenides 2026 (2D TMDs) 참석

2026년 6월 28일 ~ 7월 2일, 싱가포르에서 열린 2026 Transition Metal Dichalcogenides에 배준엽, 김정민, 고석진, 이승윤, 이수빈, 문상현, 박제환, 양성윤 학생이 참석하였습니다.

[발표 주제]

배준엽: (포스터 발표) Identifying E-beam Induced Fast Interface Traps in MoS2 FETs via Transient Pulse Analysis

김정민: (포스터 발표) Self-Aligned WS2/WSe2 JFET Fabricated via Selective Wet Etching

고석진: (포스터 발표) Decoupling Hole and Electron Charge Transport via Monolithic Mixed-Dimensional Contacts: A Universal Strategy to Overcome Fermi-Level Pinning in 2D Semiconductors

이승윤: (포스터 발표) Enhanced p-type Carrier Injection in WSe2 via UV/Ozone-Induced Defect Engineering and Mixed-dimensional Contacts

이수빈: (포스터 발표) On-state Current Enhancement in Vertical WSe2/MoS2 Tunnel Field-Effect Transistors via Complementary Doping and Interfacial Layer Engineering

문상현: (포스터 발표) High-Performance 2D WS2/GaOX MOSFETs with Long-Term and High-Temperature Reliability and Its Logic Applications

박제환: (포스터 발표) Avalanche Photodetection and Noise-Driven Probabilistic Computing via a Monolithic Lateral Tungsten Disulfide p-i-n Homojunction

양성윤: (포스터 발표) Controlled Surface Oxidation of WSe2 for Direct Integration of Ferroelectric Hf0.5Zr0.5O2 in p-type Memory Devices