5th International Conference on Advanced Electromaterials

2019년 11월 5일 - 8일, 한국 제주도에서 열린 5th International Conference on Advanced Electromaterials 에 김장혁, 이건엽, 박현익, 최용하, 김수현, 배진호, 이동렬, 김현, 양수정, 조철희 학생이 참석하여 발표를 수행하였습니다.

"Hetero-structure Transistors Based on β-Ga2O3 and 2D Materials" - Oral presentation (김장혁 석박통합과정)

"Two-Dimensionally Layered Materials-based PNP/NPN Heterojunction Devices" - Oral presentation (이건엽 석박통합과정)

"Programmable 2-Dimensional van der Waals Heterojunction Memristive Transistors" - Oral presentation (박현익 박사과정)

"Electrochemical Etching of Aluminum Nitride for Fast and Selective Surface Roughening" - Oral presentation (최용하 박사과정)

"Reduction of the Dark Current through the Application of 2D hBN Barrier in β-Ga2O3 Metal-Semiconductor-Metal Photodetectors" -Oral presentation (김수현 석박통합과정)

"412 V Breakdown Voltage β-Ga2O3 Nanolayer Field-effect Transistor with Dual Field Plates" - Oral presentation (배진호 석박통합과정)

"High-energy Proton Irradiated h-BN Capacitor" - Poster presentation (이동렬 석박통합과정)

"Intimate Contacts to Two-Dimensional WSe2 via Thermal Alloying" - Poster presentation (김현 석사과정)